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Datasheet File OCR Text: |
SEMiX252GB176HDs Absolute Maximum Ratings Symbol IGBT VCES IC ICnom ICRM ICRM = 2xICnom VCC = 1000 V VGE 20 V Tj = 125 C VCES 1700 V VGES tpsc Tj = 150 C Tc = 25 C Tc = 80 C 1700 246 175 150 300 -20 ... 20 10 -55 ... 150 Tc = 25 C Tc = 80 C 288 195 150 IFRM = 2xIFnom tp = 10 ms, sin 180, Tj = 25 C 300 1200 -40 ... 150 600 -40 ... 125 AC sinus 50Hz, t = 1 min 4000 V A A A A V s C A A A A A C A C V Conditions Values Unit SEMiX(R)2s Trench IGBT Modules SEMiX252GB176HDs Tj Inverse diode IF IFnom IFRM IFSM Tj Module It(RMS) Tstg Visol Preliminary Data Features * Homogeneous Si * Trench = Trenchgate technology * VCE(sat) with positive temperature coefficient * UL recognised file no. E63532 Tj = 150 C Typical Applications * AC inverter drives * UPS * Electronic welders Characteristics Symbol IGBT VCE(sat) VCE0 rCE VGE(th) ICES Cies Coes Cres QG RGint td(on) tr Eon td(off) tf Eoff Rth(j-c) Rth(j-s) per IGBT per IGBT IC = 150 A VGE = 15 V chiplevel Tj = 25 C Tj = 125 C Tj = 25 C Tj = 125 C VGE = 15 V VGE=VCE, IC = 6 mA VGE = 0 V VCE = 1700 V VCE = 25 V VGE = 0 V VGE = - 8 V...+ 15 V Tj = 25 C VCC = 1200 V IC = 150 A Tj = 125 C RG on = 9 RG off = 9 Tj = 25 C Tj = 125 C f = 1 MHz f = 1 MHz f = 1 MHz 13.3 0.55 0.44 1400 4.25 265 55 90 875 125 55 0.12 Tj = 25 C Tj = 125 C 5.2 2 2.45 1 0.9 6.7 10.3 5.8 0.1 2.45 2.9 1.2 1.1 8.3 12.0 6.4 0.3 V V V V m m V mA mA nF nF nF nC ns ns mJ ns ns mJ K/W K/W Conditions min. typ. max. Unit GB (c) by SEMIKRON Rev. 10 - 02.12.2008 1 SEMiX252GB176HDs Characteristics Symbol Conditions Tj = 25 C Tj = 125 C Tj = 25 C Tj = 125 C Tj = 25 C Tj = 125 C IF = 150 A Tj = 125 C di/dtoff = 3300 A/s T = 125 C j VGE = -15 V Tj = 125 C VCC = 1200 V per diode per diode 18 res., terminal-chip per module to heat sink (M5) to terminals (M6) 3 2.5 TC = 25 C TC = 125 C 0.7 1 0.045 5 5 250 0,493 5% 3550 2% 0.9 0.7 3.0 4.0 min. typ. 1.6 1.5 1.1 0.9 3.0 4.0 205 55 32 max. 1.8 1.7 1.3 1.1 3.0 4.0 Unit V V V V m m A C mJ Inverse diode VF = VEC IF = 150 A VGE = 0 V chiplevel VF0 rF IRRM SEMiX(R)2s Trench IGBT Modules SEMiX252GB176HDs Qrr Err Rth(j-c) Rth(j-s) Module LCE RCC'+EE' Rth(c-s) Ms Mt w 0.19 K/W K/W nH m m K/W Nm Nm Nm g Preliminary Data Features * Homogeneous Si * Trench = Trenchgate technology * VCE(sat) with positive temperature coefficient * UL recognised file no. E63532 Typical Applications * AC inverter drives * UPS * Electronic welders Temperature sensor R100 B100/125 Tc=100C (R25=5 k) R(T)=R100exp[B100/125(1/T-1/T100)]; T[K]; k K GB 2 Rev. 10 - 02.12.2008 (c) by SEMIKRON SEMiX252GB176HDs Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC = f (TC) Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic (c) by SEMIKRON Rev. 10 - 02.12.2008 3 SEMiX252GB176HDs Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG Fig. 9 Typ. transient thermal impedance Fig. 10 Typ. CAL diode forward charact., incl. RCC'+EE' Fig. 11 Typ. CAL diode peak reverse recovery current Fig. 12 Typ. CAL diode recovery charge 4 Rev. 10 - 02.12.2008 (c) by SEMIKRON SEMiX252GB176HDs SEMiX 2s GB This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. (c) by SEMIKRON Rev. 10 - 02.12.2008 5 |
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